3DG110 型晶体管
- 结构名称：NPN硅高频小功率三极管。
- 等级标记：Ⅱ类
- 主要用途：接收机及无线电设备作高频放大和振荡。
- 外形图：B-2型
3DG110 型晶体管
| 序号 | 参数 | 单位 | 测试条件 | 规 范 值 | |||||||
| 3DG110A | 3DG110B | 3DG110C | 3DG110D | 3DG110E | 3DG110F | ||||||
| 1 | PCM | mW | Ta=25℃ | 300 | |||||||
| 2 | IC | mA | 50 | ||||||||
| 3 | TjM | ℃ | 175 | ||||||||
| 4 | ICBO | μA | VCB=10V | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ||
| 5 | ICEO | μA | VCE=10V | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ||
| 6 | IEBO | μA | VEB=2V | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | ||
| 7 | V(BR)CBO | V | ICB=50μA | ≥20 | ≥40 | ≥60 | ≥20 | ≥40 | ≥60 | ||
| 8 | V(BR)CEO | V | ICE=50μA | ≥15 | ≥30 | ≥45 | ≥15 | ≥30 | ≥45 | ||
| 9 | V(BR)EBO | V | IEB=50μA | ≥4 | ≥4 | ≥4 | ≥4 | ≥4 | ≥4 | ||
| 10 | VBE(sat) | V | IC=10mA，IB=1mA | ≤1 | ≤1 | ≤1 | ≤1 | ≤1 | ≤1 | ||
| 11 | VCE(sat) | V | IC=10mA，IB=1mA | ≤0.7 | ≤0.7 | ≤0.7 | ≤0.7 | ≤0.7 | ≤0.7 | ||
| 12 | hFE | VCE=10V，IC=10mA | 40~270 | 40~270 | 40~270 | 40~270 | 40~270 | 40~270 | |||
| 13 | fT | MHz | VCB=10V，IC=10mA，f=100MHz | ≥150 | ≥150 | ≥150 | ≥300 | ≥300 | ≥300 | ||
允许测试误差±10%
NPN型金属封装硅高频小功率晶体管hFE分档表
| hFE | 40~55 | 55~80 | 80~120 | 120~180 | 180~270 |
| 色标 | 黄 | 绿 | 蓝 | 紫 | 灰 |
3DG110 型晶体管B-2 型封状尺寸图
