3DG51 型晶体管
- 结构名称:NPN硅超高频小功率低噪声三极管。
- 等级标记:Ⅱ类
- 主要用途:接收机、无线电设备作超高频低噪声放大、混频及振荡。
- 外 形 图:B-2A型
3DG51 型晶体管参数
| 序号 |
参数 |
单位 |
测试条件 |
规 范 值 |
| 3DG51A |
3DG51B |
3DG51C |
3DG51D |
3DG51E |
| 1 |
PCM |
mW |
|
100 |
| 2 |
IC |
mA |
|
15 |
| 3 |
TjM |
℃ |
|
175 |
| 4 |
ICBO |
μA |
VCB=6V |
≤0.1 |
≤0.1 |
≤0.1 |
≤0.1 |
≤0.1 |
| 5 |
ICEO |
μA |
VCE=6V |
≤0.1 |
≤0.1 |
≤0.1 |
≤0.1 |
≤0.1 |
| 6 |
IEBO |
μA |
VEB=1.5V |
≤0.1 |
≤0.1 |
≤0.1 |
≤0.1 |
≤0.1 |
| 7 |
V(BR)CBO |
V |
ICB=50μA |
≥15 |
≥15 |
≥15 |
≥15 |
≥15 |
| 8 |
V(BR)CEO |
V |
ICE=50μA |
≥10 |
≥10 |
≥10 |
≥10 |
≥10 |
| 9 |
V(BR)EBO |
V |
IEB=50μA |
≥4 |
≥4 |
≥4 |
≥4 |
≥4 |
| 10 |
VBE(sat) |
V |
IC=10mA,IB=1mA |
≤1 |
≤1 |
≤1 |
≤1 |
≤1 |
| 11 |
VCE(sat) |
V |
IC=10mA,IB=1mA |
≤0.35 |
≤0.35 |
≤0.35 |
≤0.35 |
≤0.35 |
| 12 |
hFE |
|
VCE=6V,IC=2mA |
40~270 |
40~270 |
40~270 |
40~270 |
40~270 |
| 13 |
fT |
MHz |
VCE=6V,IC=2mA,f=400MHz |
800~1200 |
1000~1500 |
1000~1500 |
≥1000 |
≥1500 |
| 14 |
NF |
db |
VCE=6V,IC=1mA,f=100MHz |
≤2.5 |
|
|
|
|
| 15 |
NF |
db |
VCE=6V,IC=1mA,f=600MHz |
|
≤3 |
≤2.5 |
|
|
允许测试误差±10%
NPN型金属封装硅高频小功率晶体管hFE分档表
| hFE |
40~55 |
55~80 |
80~120 |
120~180 |
180~270 |
| 色标 |
黄 |
绿 |
蓝 |
紫 |
灰 |
3DG51 型晶体管封装尺寸图
