TPD4EUSB30 用于高速低电压接口的双通道 ESD/ 电涌解决方案
The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 provide 2 and 4 channel ESD and surge protection solutions in space saving, flow-through packages. These devices have been designed to protect sensitive components which are connected to ultra high-speed data and transmission lines. These devices also offer 5 A (8/20 us) peak pulse current ratings per IEC 61000-4-5 (lightning) specification.
The monolithic silicon technology allows matching between the differential signal pairs. The differential 0.05-pF capacitance ensures that the signal distortion due to added ESD clamp remains minimal at high-speed differential data transmission.
The TPD4EUSB30 offers low 4.5V dc break-down voltage. The low capacitance and break-down voltage, coupled low dynamic resistance, make the TPD4EUSB30 a superior ESD/ surge protection device for high-speed differential IOs based off ultra-low voltage process nodes
| TPD2EUSB30 | TPD2EUSB30A | TPD4EUSB30 | |
| Number of Channels | 2 | 2 | 4 |
| IEC 61000-4-2 Contact(+/- kV) | +/- 8 | +/- 8 | +/-8 |
| IEC 61000-4-2 Air-Gap(+/- kV) | +/- 8 | +/- 8 | +/-8 |
| IO Capacitance(Typ)(pF) | 0.7 | 0.7 | 0.8 |
| Differential Capacitance(pF) | 0.01 | 0.05 | 0.05 |
| Breakdown Voltage(Min)(V) | 9 | 4.5 | 8 |
| IO Leakage Current(nA) | 10 | 10 | 10 |
| Operating Temperature Range(°C) | -40 to 85 | -40 to 85 | -40 to 85 |
TPD4EUSB30 特性
- Single and Dual-Pair Differential Lines to Protect the Differential Data and Clock Lines of the USB3.0, eSATA, or LVD Interface
- Flow-Through Pin Mapping for the High-Speed Lines Ensures near Zero Additional Skew Due to Board Layout While Placing Protection Chip Near the Connector
- Supports Data Rates in Excess of 6 Gbps
- ESD Protection Meets or Exceeds IEC61000-4-2 (Level 4)
- Low Capacitance 0.05pF (IO to IO)
- 1
Dynamic Resistance
- 5-A Peak Pulse Current (per 8/20 us Pulse)
- Industrial Temperature Range: –40°C to 85°C
- Space-Saving DRT, DQA Packages
- APPLICATIONS
- Notebooks
- Set-Top Boxes
- DVD Players
- Media Players
- Portable Computers
TPD4EUSB30 芯片订购指南
| 器件 | 状态 | 温度 | 价格 | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| TPD4EUSB30DRTR | ACTIVE | -40 to 85 | 0.15 | 1ku | SOT (DRT) | 3 | 3000 | LARGE T&R |
TPD4EUSB30 质量与无铅数据
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| TPD4EUSB30DRTR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TPD4EUSB30DRTR | TPD4EUSB30DRTR |
TPD4EUSB30 应用技术支持与电子电路设计开发资源下载
- TPD4EUSB30 数据资料 dataSheet 下载.PDF
- TI 德州仪器ESD 解决方案选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 接口选择指南 (Rev. D) (PDF 2994 KB)
- ESD Protection Guide (PDF 2885 KB)
- Reading and Understanding an ESD Protection Datasheet (PDF 2523 KB)
- Q1 2009 Issue Analog Applications Journal (slyt319.PDF, 1.39 MB)
- Isolated CAN Reference Design (PDF 48 KB)
- Isolated RS-485 Reference Design (PDF 80 KB)
- 无铅组件涂层的保存期评估 (PDF 1305 KB)
- Isolated CAN EVM User's Guide (PDF 1168 KB)
- Energy Harvesting: Solar Solutions Guide (PDF 409 KB)
- Analog Signal Chain Guide (8.62 MB)
- Industrial Interface IC Solutions (101 KB)